植根厚土 篤行致遠(yuǎn)：鄭厚植院士文集

目錄
序
部分　自述
自述　3
第二部分　論著選編
Magnetoconductance studies on InP surfaces　13
Electron subbands on InP　19
Electron subbands on InP　23
Observation of size effect in the quantum Hall regime　41
Distribution of the quantized Hall potential in GaAs AlxGa1-xAs heterostructures　49
Size effect in the quantum Hall regime　56
Gate controlled transport in narrow GaAs/AlxGa1-xAs heterostructures　61
Influences of particle hole Hartree interaction on magnetoresistances in disordered two dimensional hole systems　70
Influences of a parallel magnetic field on localization of disordered twodimensional electrons in GaAs/AlxGa1-xAs heterostructures　86
Nonresonant magnetotunneling in asymmetric GaAs/AlAs doublebarrier structures　93
Γ-X-Γ magneto tunneling oscillations in GaAs/AlAs double barrier structures　100
Tunneling escape time of electrons from a quantum well with Γ-X mixing effect　107
Density of states of the twodimensional electron gas studied by magnetocapacitances of biased double barrier structures　114
Studies on tunneling escape time of electrons from a quantum well in multilayered heterostructures　129
Direct observation for the reduction of exciton binding energy induced by perpendicular electric field　136
Subband separation energy dependence of intersubband relaxation time in wide quantum wells　143
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix　150
Suppression of sequential tunneling current by a perpendicular magnetic field in a three barrier， two well heterostructure　157
Electron transport through a double quantum dot structure with intradot and interdot Coulomb interactions　163
Magnetoexciton polaritons in planar semiconductor microcavities　172
Electrical manifestation of the quantum confined Stark effect by quantum capacitance response in an optically excited quantum well　180
Capacitance voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells　188
ivInfluence of transverse interdot coupling on transport properties of an Aharonov Bohm structure composed by two dots and two reservoirs　195
Ultrafast geometric manipulation of electron spin and detection of the geometric phase via Faraday rotation spectroscopy　206
Evaluation of holonomic quantum computation:adiabatic versus nonadiabatic　214
Mode splitting in photoluminescence spectra of a quantum dot embedded microcavity　222
Conditions for the local manipulation of tripartite Gaussian states　229
Laterally confined modes in wet etched， metal coated， quantum dot inserted pillar microcavities　237
Noiseless method for checking the Peres separability criterion by local operations and classical communication　244
A convenient way of determining the ferromagnetic transition temperature of metallic (Ga，Mn)As　253
A new type of photoelectric response in a double barrier structure with a wide quantum well　262
Spin polarized injection into a p-type GaAs layer from a Co2MnAl injector　267
Measurement of the transmission magnetic circular dichroism of Ga1-x MnxAs epilayers using a built in p-i-n photodiode　275
Valley Zeeman splitting of monolayer MoS2 probed by low-field magnetic circular dichroism spectroscopy at room temperature　284
GaAs/P型AlxGa1-xAs 異質(zhì)結(jié)界面二維空穴的量子輸運(yùn)特性　295
Photonstorage in optical memory cells based on a semiconductor quantum dot quantum well hybrid structure　304
Conditions for the local manipulation of all bipartite Gaussian states　312
靜壓下半導(dǎo)體微腔內(nèi)激子與光子行為的研究　320
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wettinglayer fluctuation　325
Electric field control of deterministic current induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure　336
Tuning a binary ferromagnet into a multistate synapse with spin orbit torque induced plasticity　346
超導(dǎo)/低維電子氣耦合體系研究　361
半導(dǎo)體微腔中的重要物理現(xiàn)象　385
第三部分　科研評(píng)述
鄭厚植與低維半導(dǎo)體物理　421
第四部分　學(xué)術(shù)咨詢
創(chuàng)新三思　435
21世紀(jì)的納米技術(shù)　439
我國半導(dǎo)體超晶格科學(xué)的進(jìn)展　442
學(xué)習(xí)《論科學(xué)技術(shù)》培養(yǎng)青年科技人才　448
迎接挑戰(zhàn)，重視量子結(jié)構(gòu)、量子器件及其集成技術(shù)的基礎(chǔ)研究　450
整數(shù)、分?jǐn)?shù)量子霍爾效應(yīng)簡介　453
中國科技如何應(yīng)對(duì)WTO　470
人工物性剪裁——半導(dǎo)體超晶格物理、材料及新器件結(jié)構(gòu)的探索　472
微電子、光電子與微系統(tǒng)子領(lǐng)域技術(shù)趨勢與展望　475
具有變革性的光電子、光子器件技術(shù)發(fā)展路線圖　479
半導(dǎo)體物理　485
關(guān)于影響我國發(fā)展的重大科技問題的思考　494
關(guān)于太陽能作為可再生能源的經(jīng)濟(jì)評(píng)價(jià)　499
太陽能發(fā)電作為可再生能源的主要科學(xué)技術(shù)問題　503
關(guān)于發(fā)展我國新固態(tài)光源（SSL）的建議　513
第五部分　信件往來
給常州市懷德苑小學(xué)四（1）班同學(xué)們的一封信　523
給常州市懷德苑小學(xué)三（5）班同學(xué)們的一封信　524
給學(xué)生的一封回信　525
一段遙遠(yuǎn)的回憶——祝賀我的母校上海市曹楊第二中學(xué)建校60周年　526
第六部分　行政管理
中國科學(xué)院半導(dǎo)體研究所《知識(shí)創(chuàng)新工程》試點(diǎn)方案概要　529
半導(dǎo)體超晶格國家重點(diǎn)實(shí)驗(yàn)室的建立和發(fā)展　532
關(guān)于國家“十五”科技計(jì)劃體系研究的一點(diǎn)看法　536
關(guān)于研究所發(fā)展戰(zhàn)略的若干思考——高技術(shù)創(chuàng)新與資本運(yùn)營　538
光輝的業(yè)績，永恒的師表　541
深化改革、繼往開來——紀(jì)念中國科學(xué)院半導(dǎo)體研究所建所40周年　543
中國科學(xué)院半導(dǎo)體研究所改革進(jìn)程的若干情況　547
所長任期述職報(bào)告（1994—1998年）　566
所長述職報(bào)告（1999—2002年）　580
攜手前進(jìn)、迎接挑戰(zhàn)——祝賀清華大學(xué)微電子學(xué)研究所成立20周年　618
在第十四屆全國半導(dǎo)體物理學(xué)術(shù)會(huì)議暨半導(dǎo)體物理學(xué)術(shù)討論會(huì)開幕式上的講話　620
在中國科學(xué)院半導(dǎo)體研究所領(lǐng)導(dǎo)換屆大會(huì)上的講話622
繼往開來，重視和加強(qiáng)低維量子結(jié)構(gòu)的物理研究——祝賀黃昆院士80華誕　624
一代宗師德厚流光——紀(jì)念黃昆先生誕辰100周年　625
榮譽(yù)表彰　631
授權(quán)專利　632
培養(yǎng)學(xué)生名單　635