基于氧化鎵的超寬禁帶半導(dǎo)體薄膜生長與表征

1 Introduction
1.1 Background
1.2 Review of studies on Ga2O3, (Ga1-xInx)2O3 and (AlxGa1-x)2O3 films
1.2.1 Ga2O3
1.2.2 Si doped Ga2O3
1.2.3 (Ga1-xInx)2O3
1.2.4 (AlxGa1-x)2O3
1.3 Purpose and Outline
2 Film growth and characterization methods
2.1 Film deposition techniques
2.2 Pulsed laser deposition
2.2.1 Basic of pulsed laser deposition
2.2.2 The deposition process
2.2.3 The pulsed laser deposition equipment used in this research
2.2.4 The film growth procedures
2.3 Characterization methods
3 Growth and characterization of Ga2O3 films
3.1 Introduction
3.2 Oxygen pressure influence
3.2.1 Growth rate
3.2.2 Crystal structure
3.2.3 Transmittance and surface morphology
3.2.4 Discussions
3.3 Substrate temperature influence
3.3.1 Crystal structure
3.3.2 Optical properties
3.3.3 Surface morphology
3.3.4 Valence band structure
3.4 Growth time influence
3.5 Annealing effects
3.5.1 Annealing effect on films deposited at RT
3.5.2 Annealing effect on films deposited at 500 oC
3.5.3 Annealing effect on CL spectra
3.6 Conclusions
4 Effect of Si doping on properties of Ga2O3 films
4.1 Introductions
4.2 Si content influence
4.3 Substrate temperature influence
4.4 Oxygen pressure influence
4.5 Conclusions
5 Growth and characterization of (Ga1-xInx)2O3 films
5.1 Introduction
5.2 Bandgap engineering of (Ga1-xInx)2O3 films
5.2.1 Growth parameters
5.2.2 Optical properties
5.2.3 Structure and surface morphologies
5.3 Thermal annealing impact on crystal quality of (GaIn)2O3 alloys
5.4 Toward the understanding of annealing effects on (GaIn)2O3 films
5.4.1 Influence of annealing gas ambient
5.4.2 Influence of annealing temperature
5.5 Annealing effect on films with different indium content
5.6 Conclusions
6 Growth and characterization of (AlGa)2O3 films
6.1 Introduction
6.2 The Al content in the film
6.3 Structure of the (AlGa)2O3 films
6.4 Transmittance and bandgap of the (AlGa)2O3 films
6.5 Conclusions