注冊(cè) | 登錄讀書(shū)好,好讀書(shū),讀好書(shū)!
讀書(shū)網(wǎng)-DuShu.com
當(dāng)前位置: 首頁(yè)出版圖書(shū)科學(xué)技術(shù)自然科學(xué)物理學(xué)Cu2ZnSnS4基異質(zhì)結(jié)界面能帶帶階的第一性原理研究(英文版)

Cu2ZnSnS4基異質(zhì)結(jié)界面能帶帶階的第一性原理研究(英文版)

Cu2ZnSnS4基異質(zhì)結(jié)界面能帶帶階的第一性原理研究(英文版)

定 價(jià):¥36.00

作 者: 包烏吉斯古楞 著
出版社: 東北大學(xué)出版社
叢編項(xiàng):
標(biāo) 簽: 暫缺

購(gòu)買(mǎi)這本書(shū)可以去


ISBN: 9787551721219 出版時(shí)間: 2019-06-01 包裝: 平裝
開(kāi)本: 16開(kāi) 頁(yè)數(shù): 89 字?jǐn)?shù):  

內(nèi)容簡(jiǎn)介

  世界能源的日益緊缺和人們環(huán)保意識(shí)增強(qiáng)的當(dāng)下,薄膜太陽(yáng)能電池應(yīng)用研究已成為世界各國(guó)研究的熱點(diǎn)?;衔锇雽?dǎo)體Cu2ZnSnS4(CZTS)由于持有太陽(yáng)能電池所要求的禁帶寬度和較大的光吸收系數(shù)而被廣泛研究。本專著內(nèi)容分為八章,一章敘述太陽(yáng)能電池工作原理、CZTS太陽(yáng)能電池研究背景以及一性原理計(jì)算方法。第二、三、四章利用一性原理計(jì)算方法分別計(jì)算了CdS/ CZTS和ZnO/ CZTS異質(zhì)結(jié)界面能帶帶階。第五章分析了二次相對(duì)CZTS吸收層材料內(nèi)的影響。第六章調(diào)整了Cd1-xZnxS/CZTS異質(zhì)界面能帶結(jié)構(gòu)。第七章以IV 族的Si和Ge代替Sn原子,計(jì)算并比較了ZnS/Cu2ZnIVS4(IV=Si,Ge,Sn)界面能帶帶階。第八章本專著總結(jié)。

作者簡(jiǎn)介

暫缺《Cu2ZnSnS4基異質(zhì)結(jié)界面能帶帶階的第一性原理研究(英文版)》作者簡(jiǎn)介

圖書(shū)目錄

Chapter 1 Introduction
1.1 Solar energy
1.2 Solar cell operation
1.2.1 Photovohaic effect
1.2.2 Band discontinuity at heterojunction interface
1.3 Photovoltaic material research
1.4 Background and survey of literature of Cu2ZnSnS4-based solar cells
1.4.1 Properties of Cu2ZnSnS4 thin films
1.4.2 CdS/CZTS heterointerfaces
1.4.3 ZnO/CZTS heterointerface
1.4.4 Secondary phases in kesterite Cu2ZnSnS4 absorber thin film
1.5 First-principles calculation
1.5.1 Density functional theory (DFT)
1.5.2 Exchange-Correlation functional approximations
1.5.3 Pseudopotential
1.6 Objective of this work
1.7 Preview of the monograph
References
Chapter 2 Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
2.1 Introduction
2.2 Calculation
2.2.1 Structure of CdS/CZTS heterojunction
2.2.2 Calculation of density of states
2.3 Results and discussion
2.3.1 Calculation of energy levels and predicted VBM positions for the respective layer of atom in the CdS/Cu2ZnSnS4 supercell
2.3.2 Band alignment at the CdS/Cu2ZnSnS4 heterointerface
2.3.3 Charge of each atom for the respective layers in the supercell
2.4 Conclusion
References
Chapter 3 Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface
3.1 Introduction
3.2 Calculation
3.2.1 Structure of CdS/CZTS heterojunetion
3.2.2 Calculation of density of states
3.3 Results and discussion
3.3.1 Energies of the reference core levels and VBM for the respective layer
3.3.2 Charge of each atom
3.3.3 Band alignment at the CdS/Cu2ZnSnS4 heterointerfaee
3.4 Conclusion
References
Chapter 4 Band Offsets at the ZnO/Cu2ZnSnS4 Interface Based on the First Principles Calculation
4.1 Introduction
4.2 Calculation
4.2.1 ZnO/CZTS heterostructure
4.2.2 Density of states
4.3 Results and discussion
4.3.1 Effects of interface atomic structure
4.3.2 Effects of strain and the conduction band offset
4.3.3 Consequences with the solar cell properties
4.4 Conclusions
Referanees
Chapter 5 Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material
5.1 Introduction
5.2 Calculation
5.2.1 Crystal structure of CH2SnS3
5.2.2 Density of state
5.3 Result and discussion
5.4 Conclusion
References
Chapter 6 Band Offsets Engineering at CdxZn1-xS/Cu2ZnSnS4 Heterointerface
6.1 Introduction
6.2 Calculation
6.3 Results and discussions
6.3.1 Electronic structures and band gap
6.3.2 Band alignment for Cd1-xZnxS/CZTS heterointerfaces
6.4 Conclusion
References
Chapter 7 Study of Band Offset at ZnS/CueZnIVS4 (IV = Si, Ge, Sn) Heterointerfaces
7.1 Introduction
7.2 Calculation
7.3 Result and discussion
7.3.1 First principles calculation
7.3.2 Numerical simulation
7.4 Conclusion
References
Chapter 8 Conclusions
8.1 Main conclusion of this monograph
8.2 Suggestions for future work
Publications

本目錄推薦

掃描二維碼
Copyright ? 讀書(shū)網(wǎng) m.ranfinancial.com 2005-2020, All Rights Reserved.
鄂ICP備15019699號(hào) 鄂公網(wǎng)安備 42010302001612號(hào)