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晶體生長(zhǎng)手冊(cè)4:蒸發(fā)及外延法晶體生長(zhǎng)技術(shù)

晶體生長(zhǎng)手冊(cè)4:蒸發(fā)及外延法晶體生長(zhǎng)技術(shù)

定 價(jià):¥88.00

作 者: (美)德哈納拉 等主編
出版社: 哈爾濱工業(yè)大學(xué)出版社
叢編項(xiàng):
標(biāo) 簽: 晶體學(xué) 科學(xué)與自然

ISBN: 9787560338699 出版時(shí)間: 2013-01-01 包裝: 平裝
開本: 16開 頁(yè)數(shù): 417 字?jǐn)?shù):  

內(nèi)容簡(jiǎn)介

  《Springer手冊(cè)精選系列·晶體生長(zhǎng)手冊(cè)(第4冊(cè)):蒸發(fā)及外延法晶體生長(zhǎng)技術(shù)(影印版)》的主題是氣相生長(zhǎng)。這一部分提供了碳化硅、氮化鎵、氮化鋁和有機(jī)半導(dǎo)體的氣相生長(zhǎng)的內(nèi)容。隨后的PartE是關(guān)于外延生長(zhǎng)和薄膜的,主要包括從液相的化學(xué)氣相淀積到脈沖激光和脈沖電子淀積。

作者簡(jiǎn)介

  Govindhan Dhanaraj is the Manager of Crystal GrowthTechnologies at Advanced Renewable Energy Company (ARC Energy) atNashua, New Hampshire (USA) focusing on the growth of large sizesapphire crystals for LED lighting applications, characterizationand related crystal growth furnace development. He received his PhDfrom the Indian Institute of Science, Bangalore and his Master ofScience from Anna University (India). Immediately after hisdoctoral degree, Dr. Dhanaraj joined a National Laboratory,presently known as Rajaramanna Center for Advanced Technology inIndia, where he established an advanced Crystal Growth Laboratoryfor the growth of optical and laser crystals. Prior to joining ARCEnergy, Dr. Dhanaraj served as a Research Professor at theDepartment of Materials Science and Engineering, Stony BrookUniversity, NY, and also held a position of Research AssistantProfessor at Hampton University, VA. During his 25 years of focusedexpertise in crystal growth research, he has developed optical,laser and semiconductor bulk crystals and SiC epitaxial films usingsolution, flux, Czochralski, Bridgeman, gel and vapor methods, andcharacterized them using x-ray topography, synchrotron topography,chemical etching and optical and atomic force microscopictechniques. He co-organized a symposium on Industrial CrystalGrowth under the 17th American Conference on Crystal Growth andEpitaxy in conjunction with the 14th US Biennial Workshop onOrganometallic Vapor Phase Epitaxy held at Lake Geneva, WIin 2009.Dr. Dhanaraj has delivered invited lectures and also served assession chairman in many crystal growth and materials sciencemeetings. He has published over 100 papers and his researcharticles have attracted over 250 rich citations.

圖書目錄

縮略語(yǔ)
PartD 晶體的氣相生長(zhǎng)
23 SiC晶體的生長(zhǎng)與表征
 23.1 SiC-背景與歷史
 23.2 氣相生長(zhǎng)
 23.3 高溫溶液生長(zhǎng)
 23.4 籽晶升華的產(chǎn)業(yè)化體材料生長(zhǎng)
 23.5 結(jié)構(gòu)缺陷及其構(gòu)造
 23.6 結(jié)語(yǔ)
 參考文獻(xiàn)
24 物理氣相傳輸法生長(zhǎng)體材料AIN晶體
 24.1 物理氣相傳輸法晶體生長(zhǎng)
 24.2 高溫材料兼容
 24.3 AIN體材料晶體的自籽晶生長(zhǎng)
 24.4 AIN體材料晶體的籽晶生長(zhǎng)
 24.5 高質(zhì)量晶體表征
 24.6 結(jié)論與展望
 參考文獻(xiàn)
25 單晶有機(jī)半導(dǎo)體的生長(zhǎng)
 25.1 基礎(chǔ)
 25.2 成核與晶體生長(zhǎng)理論
 25.3 對(duì)半導(dǎo)體單晶有機(jī)材料的興趣
 25.4 提純預(yù)生長(zhǎng)
 25.5 晶體生長(zhǎng)
 25.6 有機(jī)半導(dǎo)體單晶的質(zhì)量
 25.7 有機(jī)單晶場(chǎng)效應(yīng)晶體管
 25.8 結(jié)論
 參考文獻(xiàn)
26 鹵化物氣相外延生長(zhǎng)Ⅲ族氮化物
 26.1 生長(zhǎng)化學(xué)和熱力學(xué)
 26.2 HVPE生長(zhǎng)設(shè)備
 26.3 體材料GaN的生長(zhǎng)襯底和模版
 26.4 襯底除去技術(shù)
 26.5 HVPE中GaN的摻雜方法
 26.6 缺陷密度、位錯(cuò)和殘留雜質(zhì)
 26.7 HVPE生長(zhǎng)的體材料GaN的一些重要性能
 26.8 通過(guò)HVPE生長(zhǎng)AIN:一些初步的結(jié)論
 26.9 通過(guò)HVPE生長(zhǎng)InN:一些初步的結(jié)論
 參考文獻(xiàn)
27 半導(dǎo)體單晶的氣相生長(zhǎng)
 27.1 氣相生長(zhǎng)分類
 27.2 化學(xué)氣相傳輸——傳輸動(dòng)力學(xué)
 27.3 熱力學(xué)討論
 27.4 CVT法Ⅱ-Ⅵ化合物半導(dǎo)體的生長(zhǎng)
 27.5 納米材料的氣相生長(zhǎng)
 27.6Ⅰ-Ⅲ-Ⅵ,化合物生長(zhǎng)
 27.7 VPE法生長(zhǎng)氮化鎵
 27.8 結(jié)論
 參考文獻(xiàn)
PartE 外延生長(zhǎng)和薄膜
28化學(xué)氣相沉積的碳化硅外延生長(zhǎng)
 28.1 碳化硅極化類型
 28.2 碳化硅的缺陷
 28.3 碳化硅外延生長(zhǎng)
 28.4 圖形襯底上的外延生長(zhǎng)
 28.5 結(jié)論
 參考文獻(xiàn)
29 半導(dǎo)體的液相電外延
 29.1 背景
 29.2 早期理論和模型的研究
 ……
30 半導(dǎo)體的外延橫向增生
31 新材料的液相外延
32 分子束外延的HgCdTe生長(zhǎng)
33 稀釋氮化物的金屬有機(jī)物氣相外延和砷化物量子點(diǎn)
34 鍺硅異質(zhì)結(jié)的形成及其特性
35 脈沖激光的等離子能量和脈沖電子淀積

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