免费成人直播,三亚久爱传媒有限公司股东

內容簡介

　　國外電子與通信教材系列。本書系統(tǒng)地介紹了微電子制造科學原理與工程技術，覆蓋了集成電路制造所涉及的所有基本單項工藝，包括光刻、等離子體和反應離子刻蝕、離子注入、擴散、氧化、蒸發(fā)、氣相外延生長、濺射和化學氣相淀積等。對每一種單項工藝，不僅介紹了它的物理和化學原理，還描述了用于集成電路制造的工藝設備。本書還介紹了各種先進的工藝技術，如快速熱處理、下一代光刻、分子束外延和金屬有機物化學氣相淀積等。在此基礎上本書討論了如何將這些單項工藝集成為各種常見的集成電路工藝技術，如CMOS技術、雙極型技術和砷化鎵技術，還介紹了微電子制造的新領域，即微機械電子系統(tǒng)及其工藝技術。本書可作為高等學校微電子專業(yè)本科生和研究生相應課程的教科書或參考書，也可供與集成電路制造工藝技術有關的專業(yè)技術人員學習參考。

作者簡介

　　StephenA.Campbell：明尼蘇達大學電子與計算機工程系教授兼明尼蘇達大學微技術實驗室主任。無論是在工業(yè)界還是在大學實驗室，他在半導體器件制造領域都有著廣泛的經(jīng)驗。他的研究領域主要包括快速熱化學氣相淀積、高性能柵介質、磁MEMS和納米結構等。

圖書目錄

Contents
Parf I Overview and Materials 1
Chupte 1  An Introduction to Microelectronic Fabrication  3
      1.1 Microelecuonic Technologies: A Simple Example 5
      1.2 Unit Processes and Technologies 7
      1.3 A Roadmap for the Course 8
      1.4 Summary 9
Chaptcr 2 Semiconductor Substrates 10
      2.1 Phase Diagrams and Solid Solubility° 10
      2.2 Crystallography and Crystal Structure°  13
      2.3 Crystal Defects  16
      2.4 Czochralski Growth  21
      2.S Bridgman Growth of GaAs 29
      2.6 Float Zone Growth 30
      2.7 Wafer Preparation and Specifications 31
      2.8 Summary and Future Trends 33
      Problems  33
      References   34
Part II  Unit Process I: Hot Processing
          and lon lmplantation  37
Chapter 3 Oinusion 39
      3.1 Fick' s Diffusion Equation in One Dimension 39
      3.2 Atomistic Models of Diffusion  41
      3.3 Analytic Solutions of Fick's Law 45
      3.4 Conections to Simple Theory 47
      3.5 Diffusion Coefficients for Common Dopants 48
      3.6 Analysis of Diffused Profiles 52
      3.7 Diffusion in SiO2 59
      3.8 Diffusion Systems 60
      3.9 SUPREM Simulations of Diffusion Profies 61
      3.10 Summary 64
           Problems 64
           References 65
Chapter 4 Thermal Oxidation 68
      4.1 The Deal-Grove Model of Oxidation 68
      4.2 The Linear and Parabolic Rate Coefficients 71
      4.3 The Initial Oxidation Regime 75
      4.4 The Structure of SiO2 76
      4.5 Oxide Characterization 77
      4.6 The Effects of Dopants during Oxidation and Polysilicon
          Oxidation  83
      4.7 Oxidation-Induced Stacking Faults 86
      4.8 Altemative Gate Insulators+ 88
      4.9 Oxidation Systems 90
      4.10 SUPREM Oxidations+ 92
      4.11 Summary 93
           Ptoblems 94
           References 95
Chapter 5 Ion Implantation  98
      5.1 Idealized Ion Implantation Systems 99
      5.2 Coulomb Scattering° 104
      5.3 Venical Ptojected Range 105
      S.4 Channeling and Lateral Projected Range  110
      5.5 Implantation Damage 112
      S.6 Shallow Junction Formation+  116
      5.7 Buried Dielecuics+  118
      5.8 Ion Implantation Systems: Problems and Concerns 120
      5.9 Implanted Profiles Using SUPREM+ 122
      5.10  Summary 123
            Problems 123
            References 124
Chapter 6 Rapid Thermal Processing 127
      6.1 Gray Body Radiation, Heat Exchange, and Optical Absorption°  128
      6.2 High-Intensity Optical Sources and Chamber Design 130
      6.3 Temperature Measurement  133
      6.4 Thermoplastic Stress°  137
      6.5 Rapid Thermal Activation of Impurities  138
      6.6 Rapid Thermal Processing of Dielectrics  140
      6.7 Silicidation and Contact Formation 141
      6.8 Alternative Rapid Thermal Processing Systems  142
      6.9 Summary  143
          Problems  143
          References   144
Part III Unit Processes 2:
          Pattern Transfer  149
Chapter 7 Optical Lithography 151
      7.1 Lithography Overview 151
      7.2 Diffraction°  155
      7.3 The Modulation Transfer Function and Optical Exposures  158
      7.4 Source Systems and Spatial Coherence 159
      7.5 Contact/Proximity Printers  165
      7.6 Projection Printers  167
      7.7 Advanced Mask Concepts+ 172
      7.8 Surface Reflections and Standing Waves 176
      7.9 Alignment  178
      7.10 Summary  179
           Problems  180
           References  180
Chapter 8 Photoresists 183
      8.1 Photoresist Types  183
      8.2 Organic Materials and Polymers° 184
      8.3 Typical Reactions of DQN Positive Photoresist  186
      8.4 Contrast Curves  187
      8.5 The Critical Modulation Transfer Function  190
      8.6 Applying and Developing Photoresist 191
      8.7 Second-Order Exposure Effects  195
      8.8 Advanced Photoresists and Photoresist Processes+  196
      8. 9 Summary 200
           Problems 200
           References 202
Chapter 9 Nnnnptical Lithngraphic Techniques+  205
      9.1 Interactions of High-Energy Beams with Matter° 205
      9.2 Direct Write Electron Beam Lithography Systems  208
      9.3 Direct Write Electron Beam Lithography Summary and Outlook  214
      9.4 X-Ray Sources° 216
      9.5 Proximity X-Ray Exposure Systems 219
      9.6 Membrane Masks 221
      9.7 Projection X-Ray Lithography 224
      9.8 Projection Electron-Beam Lithography (SCALPEL) 225
      9.9 E-Beam and X-Ray Resists 227
      9.10 Radiation Damage in MOS Devices 228
      9.11 Summary 230
           Problems 231
           References 231
Chapter 10 Vaeuum Science and Plasmas 236
      10.1 The Kinetic Theory of Gasses° 236
      10.2 Gas Row and Conductance 239
      10.3 Ptessure Ranges and Vacuum Pumps 240
      10.4 Vacuum Seals and Pressure Measurement 247
      10.5 The DC Glow Discharge° 249
      10.6 RF Discharges 251
      10.7 High-Density Plasmas 252
      10.8 Summary 255
           Problems 255
           References 256
Chapter 11 Etching 258
      11.1 Wet Etching 259
      11.2 Chemical Mechanical Polishing 264
      11.3 Basic Regimes of Plasma Etching 266
      11.4 High-Pressure Plasma Etching 267
      11.5 Ion Milling 274
      11.6 Reactive lon Etching 277
      11.7 Damage in Reactive lon Etching+ 281
      11.8 High-Density Plasma (HDP) Etching 282
      11.9 Liftoff 283
      11.10 Summary 285
            Problems 2S5
            References 286
Part IV Unit Processes 3: Thin Films 293
Chapter 12 Physical Deposition: Evaporation
            and Sputtering  295
      12.1 Phase Diagrams: Sublimation and Evaporation° 296
      12.2 Deposition Rates 297
      12.3 Step Coverage 301
      12.4 Evaporator Systems: Crucible Heating Techniques 302
      12.3 Multicomponent Films 304
      12.6 An Introduction to Sputtering 305
      12.7 Physics of Sputtering° 306
      12.8 Deposition Rate: Spuner Yield 308
      12.9 High-Density Plasma Sputtering 310
      12.10 Morphology and Step Coverage  312
      12.11 Sputtering Methods   315
      12.12 Sputtering of Specific Materials 317
      12.13 Stress in Deposited Layers 319
      12.14 Sommary 320
            Problems 321
            References 322
Chapter 13 Ghemical Vapnr Deposition 326
      13.1 A Simple CVD System for the Deposition of Silicon 326
      13.2 Chemical Equilibrium and the Law of Mass Action° 328
      13.3 Gas Flow and Boundary Layers° 331
      13.4 Evaluation of the Simple CVD System 336
      13.S Atmospheric CVD of Dielecuics 337
      13.6 Low-Pressure CVD of DielecRics and Semiconductors
           in Hot Wall Systems 339
      13.7 Plasma-Enhanced CVD of Dielectrics 343
      13.8 Metal CVD+ 347
      13.9 Summary 350
           Problems 350
           References 351

Chapter 14 Epitaxial Growth 355
      14.1 Wafer Cleaning and Native Oxide Removal 356
      14.2 The Thermodynamics of Vapor-Phase Growth 360
      14.3 Surface Reactions 364
      14.4 Dopant Incorporation 365
      14.3 Defects in Epitaxial Growth 366
      14.6 Selective Growth+ 368
      14.7 Halide Transport GaAs Vapor-Phase Epitaxy 369
      14.8 Incommensurate and Strained Layer Heteroepitaxy 370
      14.9 Metal Organic Chemical Vapor Deposition (MOCVD) 373
      14.10 Advanced Silicon Vapor-Phase Epitaxial Growth Techniques 378
      14.11 Molecular Beam Epitaxy Technology 381
      14.12 BCF Tleory+ 386
      14.13 Gas Source MBE and Chemicat Beam Epitaxy+ 391
      14.14 Summary 392
            Problems 392
            References 393
Part V Process Integration 399
Chapter 15 Device Isolation, Contacts, and Metallization 401
      15.1 Junction and Oxide Isolation 401
      15.2 LOCOS Methods 404
      15.3 Trench Isolation 407
      15.4 Silicon on Insulator Isolation Techniques 411
      15.S Semi-insulating Substrates 412
      15.6 Schottky Contacts 414
      15.7 Implanted Ohmic Contacts 418
      15.8 Alloyed Contacts 421
      15.9 Multilevel Metallization 423
      15.10 Planarization and Advanced Interconnect 428
      15.11 Summary 432
            Problems 433
           References 434
Chapter 16 CMOS Technoiogies 439
      16.1 Basic Long-Channel Device Behavior 439
      16.2 Early MOS Technologies 441
      16.3 The Basic 3-um Technology 442
      16.4 Device Scaling 447
      16.5 Hot Carrier Effects and Drain Engineering 455
      16.6 Processing for Robust Oxides 458
      16.7 Latchup 459
      16.8 Shallow Source/Drains and Tailored Channel Doping 461
      16.9 Summary 464
           Problems 464
           References 466
Chapter 17 GaAs Technologies 471
      17.1 Basic MESFET Operation  471
      17.2 Basic MESFET Technology 472
      17.3 Digital Technologies 474
      17.4 MMIC Technologies 478
      17.5 MODFETs 480
      17.6 Optoelectronic Devices 482
      17.7 Summary 484
           Problems 484
           References 485
Chapter 18 Silicon Bipolar Technologies 488
      18.1 Review of Bipolar Devices: Ideal and Quasiideal Behavior 488
      18.2 Second-Order Effects 489
      18.3 Performance of BJTs 491
      18.4 Early Bipolar Processes 494
      18.5 Advanced Bipolar Processes 495
      18.6 Hot Electron Effects in Bipolar Transistors 504
      18.7 BiCMOS 504
      18.8 Analog Bipolar Technologies 507
      18.9 Summary 508
           Problems 508
           References 510
Chapter 19 MEMS 514
      19.1 Fundamentals of Mechanics 515
      19.2 Stress in Thin Films 517
      19.3 Mechanical to Electrical Transduction 518
      19.4 Mechanics of Common MEMS Devices 523
      19.5 Bulk Micromachining Etching Techniques 527
      19.6 Bulk Micromachining Process Flow 535
      19.7 Surface Micromachining Basics 540
      19.8 Surface Micromachining Process now 544
      19.9 MEMs Actaators 546
      19.10 High-Aspect Ration Microsystems Technology (HARMST) 551
      19.11 Summary 553
            Problems 554
            References 557
Chapter 20 Integrated Circuit Manufacturing 559
      20.1 Yield Prediction and Yield Tracking 560
      20.2 Particle Control 565
      20.3 Statistical Process Control 567
      20.4 Full Factorial Experiments and ANOVA 569
      20.5 Design of Experiments 571
      20.6 Computer Integrated Mallufacturing 575
      20.7 Summary 577
          Problems 578
          References 578
Appendix I. Acronyms and Gnmmon Symbols 580
Appendix II. Prnperties of Selected
              Semiconductor Materials 585
Appendix III. Physical Constants 586
Appendix IV. Conversinn Factors 588
Appeudix V. Some Propenies of the Error Funetion 581
Appeudix VI. F Values 585
Appendix VII. SUPREM Commands 587
               index 599